| 发明名称 |
Method to improve the uniformity and reduce the surface roughness of the silicon dielectric interface |
| 摘要 |
The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region ( 180 ) on the upper surface ( 170 ) of a silicon substrate prior to forming the dielectric layer on the upper silicon surface.
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| 申请公布号 |
US6939816(B2) |
申请公布日期 |
2005.09.06 |
| 申请号 |
US20010001483 |
申请日期 |
2001.11.01 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO ANTONIO L. P. |
| 分类号 |
H01L29/78;H01L21/28;H01L21/302;H01L21/306;H01L21/31;H01L21/316;H01L21/318;H01L21/469;H01L29/51;(IPC1-7):H01L21/31 |
主分类号 |
H01L29/78 |
| 代理机构 |
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