发明名称 |
SELF-ALIGNED NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING SAME |
摘要 |
A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor:
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film. |
申请公布号 |
PL373571(A1) |
申请公布日期 |
2005.09.05 |
申请号 |
PL20030373571 |
申请日期 |
2003.02.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
APPENZELLER JOERG;AVOURIS PHAEDON;CHAN KEVIN K.;COLLINS PHILIP G.;MARTEL RICHARD;WONG HON-SUM PHILIP |
分类号 |
H01L51/00;H01L51/05;H01L51/30 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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