发明名称 SELECTIVE ETCHING OF A PROTECTIVE LAYER
摘要 An electron-emitting device including a protective layer that is formed on a catalyst layer to protect the catalyst layer from the deleterious environmental conditions before or during a cathode process. The present invention further includes a half etching process that is adapted to partially remove portions of the protective layer from the catalyst layer to etch the catalyst layer except carbon nano-tube growing portions. Portions of the protective layer still remain on the catalyst layer to protect the catalyst layer from the deleterious conditions from next cathode formation process.
申请公布号 KR20050088394(A) 申请公布日期 2005.09.05
申请号 KR20057011310 申请日期 2005.06.17
申请人 CDREAM DISPLAY CORPORATION;SANYO ELECTRIC CO., LTD. 发明人 SONG, JONG WOO;CHANG, CHUL HA;KIM, JUNG JAE;SUZUKI KOJI;KUWAHARA TAKASHI
分类号 C01B31/02;H01J9/02;H01L21/3213;(IPC1-7):H01J1/304 主分类号 C01B31/02
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