发明名称 |
FIELD EMISSION-TYPE ELECTRON SOURCE AND METHOD OF PRODUCING THE SAME |
摘要 |
A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
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申请公布号 |
KR20050088345(A) |
申请公布日期 |
2005.09.05 |
申请号 |
KR20057012167 |
申请日期 |
2005.06.27 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
ICHIHARA TSUTOMU;KOMODA TAKUYA;AIZAWA KOICHI;HONDA YOSHIAKI;BABA TORU |
分类号 |
H01J9/02;H01J1/304;H01J1/312;H01J31/12;(IPC1-7):H01J1/304 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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