发明名称 Semiconductor memory
摘要 Flags are formed to respectively correspond to memory cell groups each including volatile memory cells. Each flag indicates as a set state that the memory cells store data in a second memory mode. In a changing operation of changing from a first memory mode in which data is independently retained by each memory cell to a second memory mode in which same data are retained in the memory cells of each memory cell group, each flag is reset in response to the first access to the corresponding memory cell group. Therefore, only the first access is made in the second memory mode in each memory cell group. The memory cells are accessed in a mode according to the flag in the changing operation, thereby allowing a system managing the semiconductor memory to freely access the memory cells even during the changing operation. Consequently, a practical changing time can be eliminated.
申请公布号 US2005190625(A1) 申请公布日期 2005.09.01
申请号 US20050098557 申请日期 2005.04.05
申请人 FUJITSU LIMITED 发明人 MATSUZAKI YASUROU
分类号 G11C7/10;G11C11/406;G11C11/4063;(IPC1-7):G11C7/00 主分类号 G11C7/10
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