发明名称 |
POLYMER, PHOTORESIST COMPOSITION CONTAINING THE POLYMER, AND METHOD OF FORMING RESIST PATTERN |
摘要 |
<p>A polymer which, in a chemical amplification type positive resist system, changes considerably in alkali solubility through exposure to light; a photoresist composition which contains the polymer and can form a fine pattern having high resolution; and a method of forming a resist pattern. The photoresist composition and the method of resist pattern formation employ the polymer, which has as an alkali-soluble group (i) at least one substituent selected among alcoholic hydroxy, carboxy, and phenolic hydroxy and in which the substituent has been protected by an acid-dissociable dissolution-inhibitive group (ii) represented by the following general formula (1): [Chemical formula 1] -CH2-O-R wherein R represents a C20 or lower organic group having at least one hydrophilic group.</p> |
申请公布号 |
WO2005080474(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
WO2005JP00660 |
申请日期 |
2005.01.20 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;OGATA, TOSHIYUKI;MATSUMARU, SYOGO;HADA, HIDEO |
发明人 |
OGATA, TOSHIYUKI;MATSUMARU, SYOGO;HADA, HIDEO |
分类号 |
G03F7/039;C08G85/00;G03F7/004;H01L21/027;(IPC1-7):C08G85/00 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|