发明名称 POLYMER, PHOTORESIST COMPOSITION CONTAINING THE POLYMER, AND METHOD OF FORMING RESIST PATTERN
摘要 <p>A polymer which, in a chemical amplification type positive resist system, changes considerably in alkali solubility through exposure to light; a photoresist composition which contains the polymer and can form a fine pattern having high resolution; and a method of forming a resist pattern. The photoresist composition and the method of resist pattern formation employ the polymer, which has as an alkali-soluble group (i) at least one substituent selected among alcoholic hydroxy, carboxy, and phenolic hydroxy and in which the substituent has been protected by an acid-dissociable dissolution-inhibitive group (ii) represented by the following general formula (1): [Chemical formula 1] -CH2-O-R wherein R represents a C20 or lower organic group having at least one hydrophilic group.</p>
申请公布号 WO2005080474(A1) 申请公布日期 2005.09.01
申请号 WO2005JP00660 申请日期 2005.01.20
申请人 TOKYO OHKA KOGYO CO., LTD.;OGATA, TOSHIYUKI;MATSUMARU, SYOGO;HADA, HIDEO 发明人 OGATA, TOSHIYUKI;MATSUMARU, SYOGO;HADA, HIDEO
分类号 G03F7/039;C08G85/00;G03F7/004;H01L21/027;(IPC1-7):C08G85/00 主分类号 G03F7/039
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