SIMOX SUBSTRATE PRODUCTION PROCESS AND SIMOX SUBSTRATE

摘要

There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 OMEGA cm or greater, and there is conducted a step of maintaining a temperature of from 800 DEG C to 1250 DEG C for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 OMEGA cm or greater.