PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

摘要

A photoresist composition which contains a fullerene derivative (A) having two or more malonic ester residues. The malonic ester residues preferably are groups represented by the following general formula (1): [Chemical formula 1] wherein R<1> and R<2> may be the same or different and each independently is alkyl. The alkyl preferably is one selected among C1-10 linear, branched, and cyclic alkyls. Symbol n preferably is an integer of 2 to 10.