发明名称 |
Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip |
摘要 |
A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
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申请公布号 |
US2005190509(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20040788727 |
申请日期 |
2004.02.27 |
申请人 |
FOX CIARAN A.;GILL HARDAYAL S.;KASIRAJ PRAKASH;LEE WEN-YAUNG;PINARBASI MUSTAFA M. |
发明人 |
FOX CIARAN A.;GILL HARDAYAL S.;KASIRAJ PRAKASH;LEE WEN-YAUNG;PINARBASI MUSTAFA M. |
分类号 |
G11B5/127;G11B5/33;(IPC1-7):G11B5/33 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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