发明名称 |
Halbleiterbauteil und Verfahren zu seiner Herstellung |
摘要 |
An active region in a semiconductor device is made up of a parallel p-n layer including a first p-semiconductor layer and a first n-semiconductor with the widths and total amounts of impurities being equal to each other to provide a structure in which charges are balanced. A section parallel to stripes in the parallel p-n layer in an inactive region is made up of a second parallel p-n layer including a second p-semiconductor layer, with its width larger than that of the first p-semiconductor layer, and a second n-semiconductor layer with its width smaller than that of the first n-semiconductor layer. The total amount of impurities in the second p-semiconductor layer is made larger than that in the second n-semiconductor layer to provide a structure in which charges are made unbalanced. |
申请公布号 |
DE102005002778(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
DE20051002778 |
申请日期 |
2005.01.20 |
申请人 |
FUJI ELECTRIC HOLDINGS CO |
发明人 |
TAKAHASHI KOUTA;IWAMOTO SUSUMU |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/739;H01L29/76 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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