发明名称 |
Method and apparatus for forming a barrier layer on a substrate |
摘要 |
A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.
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申请公布号 |
US2005189217(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20050110608 |
申请日期 |
2005.04.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ZHANG HONG;TANG XIANMIN;GOPALRAJA PRABURAM;FORSTER JOHN C.;YU JICK M. |
分类号 |
C23C14/04;C23C14/06;C23C14/18;C23C14/58;H01L21/285;H01L21/768;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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