发明名称 |
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR MULTILAYER STRUCTURE AND PRODUCTION METHOD THEREOF |
摘要 |
<p>An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.</p> |
申请公布号 |
WO2005081329(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
WO2005JP03428 |
申请日期 |
2005.02.23 |
申请人 |
SHOWA DENKO K.K.;KOBAYAKAWA, MASATO;TAKEDA, HITOSHI;MIKI, HISAYUKI;SAKURAI, TETSUO |
发明人 |
KOBAYAKAWA, MASATO;TAKEDA, HITOSHI;MIKI, HISAYUKI;SAKURAI, TETSUO |
分类号 |
H01L33/06;H01L33/24;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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