| 摘要 |
A first insulating film, a second insulating film, a third insulating film, an antireflective film, and a resist film are formed in this order on a lower-layer wiring. After dry etching the third insulating film and the second insulating film, using the resist film as a mask, the resist film and the antireflective film are removed by ashing. Thereafter, the first insulating film is dry etched, using the third insulating film as a mask, to form a wiring trench extending to the lower-layer wiring. The dry etching of the third insulating film and the second insulating film is performed using a gas containing fluorine at a pressure of 0.1 Pa to 4 Pa. Ashing is preferably performed using at least one of hydrogen and an inert gas.
|
