发明名称 Backside rapid thermal processing of patterned wafers
摘要 A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
申请公布号 US2005191044(A1) 申请公布日期 2005.09.01
申请号 US20040788979 申请日期 2004.02.27
申请人 APPLIED MATERIALS, INC. 发明人 ADERHOLD WOLFGANG;RAMAMURTHY SUNDAR;HUNTER AARON
分类号 F26B19/00;F27B5/14;F27B17/00;F27D11/00;F27D19/00;F27D21/00;H01L21/00;(IPC1-7):F27D11/00 主分类号 F26B19/00
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