发明名称 |
Methods for producing a semiconductor entity |
摘要 |
A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.
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申请公布号 |
US2005191779(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20040863193 |
申请日期 |
2004.06.07 |
申请人 |
LE VAILLANT YVES MATHIEU;RAYSSAC OLIVIER;FERNANDEZ CHRISTOPHE |
发明人 |
LE VAILLANT YVES MATHIEU;RAYSSAC OLIVIER;FERNANDEZ CHRISTOPHE |
分类号 |
H01L21/762;(IPC1-7):H01L21/30;H01L21/00;C12P21/06;H01L21/46 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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