| 摘要 |
Epitaxially growing equipment for epitaxially growing a thin film having excellent uniformity over the entire wafer surface. The epitaxially growing equipment is provided with at least a reactor which can be sealed airtight, a wafer storing means (wafer holder), which is arranged in the reactor and has a wafer placing part (pocket hole) for holding the wafer on the front side, a gas supplying means (gas introducing pipe) for supplying a material gas to t he wafer, a heating means (heater) for heating the wafer, and a heat uniformizi ng means (susceptor), which holds the wafer storing means and uniformizes heat from the heating means. In the reactor of the epitaxially growing equipment, the growing film is formed on the wafer surface by supplying the material ga s in a high-temperature status, while heating the wafer by the heating means v ia the heat uniformizing means and the wafer storing means. On the rear side of the wafer storing means, a part recessed in a dome-shape is formed.
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