发明名称 |
Ion implant monitoring through measurement of modulated optical response |
摘要 |
A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.
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申请公布号 |
US2005190369(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20050122452 |
申请日期 |
2005.05.05 |
申请人 |
SALNIK ALEX;NICOLAIDES LENA;OPSAL JON |
发明人 |
SALNIK ALEX;NICOLAIDES LENA;OPSAL JON |
分类号 |
G01N21/27;G01N21/35;G01N21/55;(IPC1-7):G01N21/00 |
主分类号 |
G01N21/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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