| 摘要 |
After an SiC film ( 4 ), an SiO<SUB>2 </SUB>film ( 5 ) and a silicon nitride film ( 6 ) are formed sequentially on an organic low dielectric constant film ( 3 ), by performing O<SUB>2 </SUB>plasma processing to a surface of the silicon nitride film ( 6 ), an oxide layer ( 7 ) is formed on the surface of the silicon nitride film ( 6 ). Then, a wiring trench pattern is formed on the silicon nitride film ( 6 ) and the oxide layer ( 7 ), and a resin layer ( 10 ) on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer ( 7 ) exposed from the resin layer ( 10 ) is removed along with unnecessary particles.
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