Production of a first contact hole of a memory component comprises forming a semiconductor substrate having a cell field region and a logic region, producing an insulating layer on the semiconductor surface, and further processing

摘要

Production of a first contact hole of a memory component comprises forming a semiconductor substrate (10) having a cell field region (20) and a logic region (30), producing an insulating layer (11) on the semiconductor surface, forming a sacrificial layer (12) on the insulating layer, depositing a fist mask layer, structuring the first mask layer to form first mask layer covers, anisotropically etching the sacrificial layer to expose the insulating layer, removing the first mask layer covers, depositing a second mask layer (16), structuring the second mask layer to form second mask layer covers, anisotropically etching the sacrificial layer to expose the insulating layer, removing the second mask layer covers, producing a filler layer between the blocks formed by the sacrificial layer, etching the sacrificial layer to remove the blocks in the filler layer, removing the exposed insulating layer, and filling contact opening regions with a conducting material.