| 摘要 |
A semiconductor lamination part ( 9 ) is formed by laminating semiconductor layers on a semiconductor substrate ( 1 ) so as to emit laser light. A first dielectric film ( 17 ) is provided on one edge face of the semiconductor lamination part to have a low and desired reflection coefficient and a second dielectric film ( 18 ) is provided on another edge face. A thickness of the first dielectric film is set to give a desired reflection coefficient according to a variation curve of a reflection coefficient to a thickness of aluminum oxide film at a constant oscillating wavelength and to have a positive gradient in the curve, or to have a negative gradient in variation curve of a reflection coefficient to a wavelength, and further has a thickness of 0.6lambda or more in the optical distance. As a consequence, a semiconductor laser for a high output is obtained, in which a COD level can become high and an output can be stabilized even if a wavelength changes with an increasing temperature by operating of the semiconductor laser.
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