发明名称 |
Method for ion implanting insulator material to reduce dielectric constant |
摘要 |
An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
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申请公布号 |
US2005191828(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20040003000 |
申请日期 |
2004.12.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
AL-BAYATI AMIR;ROBERTS RICK J.;COLLINS KENNETH S.;MACWILLIAMS KEN;HANAWA HIROJI;RAMASWAMY KARTIK;GALLO BIAGIO;NGUYEN ANDREW |
分类号 |
H01J37/32;(IPC1-7):H01L21/476 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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