| 摘要 |
According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a gate electrode formed on the substrate via a gate insulating film and containing silicon, an insulating offset spacer formed on a side surface of the gate electrode and having an upper surface lower than an upper surface of the gate electrode, an insulating sidewall spacer formed on an upper side surface of the gate electrode and on a side surface of the offset spacer by using a material different from the offset spacer, a lightly doped impurity diffusion layer formed in the semiconductor substrate so as to sandwich the gate electrode, a heavily doped impurity diffusion layer formed in the semiconductor substrate in a position deeper than the lightly doped impurity diffusion layer, so as to sandwich the gate electrode and sidewall spacer, and a silicide film formed on the gate electrode.
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