METHODS OF FORMING DOPED AND UN-DOPED STRAINED SEMICONDUCTOR AND SEMICONDUCTOR FILMS BY GAS-CLUSTER ION IRRADIATION
摘要
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.
申请公布号
WO2005079318(A2)
申请公布日期
2005.09.01
申请号
WO2005US04440
申请日期
2005.02.14
申请人
EPION CORPORATION;BORLAND, JOHN, O.;HAUTALA, JOHN, J.;SKINNER, WESLEY, J.;TABAT, MARTIN, D.
发明人
BORLAND, JOHN, O.;HAUTALA, JOHN, J.;SKINNER, WESLEY, J.;TABAT, MARTIN, D.