发明名称 |
Substrate processing method and apparatus |
摘要 |
A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to planarize the metal film of the substrate. The process unit may comprise a wet process unit configured to dissolve the native oxide of the metal film in a chemical liquid or a dry process unit configured to reduce or etch the native oxide of the metal film with a gas.
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申请公布号 |
US2005191858(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20050064511 |
申请日期 |
2005.02.24 |
申请人 |
FUKUNAGA AKIRA;NOMURA TOSHIKAZU;TOKUSHIGE KATSUHIKO;TSUJIMURA MANABU |
发明人 |
FUKUNAGA AKIRA;NOMURA TOSHIKAZU;TOKUSHIGE KATSUHIKO;TSUJIMURA MANABU |
分类号 |
B24B37/04;B24B49/12;B24B49/16;H01L21/00;H01L21/321;(IPC1-7):H01L21/824;H01L21/461;B24B51/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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