发明名称 Substrate processing method and apparatus
摘要 A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to planarize the metal film of the substrate. The process unit may comprise a wet process unit configured to dissolve the native oxide of the metal film in a chemical liquid or a dry process unit configured to reduce or etch the native oxide of the metal film with a gas.
申请公布号 US2005191858(A1) 申请公布日期 2005.09.01
申请号 US20050064511 申请日期 2005.02.24
申请人 FUKUNAGA AKIRA;NOMURA TOSHIKAZU;TOKUSHIGE KATSUHIKO;TSUJIMURA MANABU 发明人 FUKUNAGA AKIRA;NOMURA TOSHIKAZU;TOKUSHIGE KATSUHIKO;TSUJIMURA MANABU
分类号 B24B37/04;B24B49/12;B24B49/16;H01L21/00;H01L21/321;(IPC1-7):H01L21/824;H01L21/461;B24B51/00 主分类号 B24B37/04
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