| 摘要 |
In a semiconductor device including a semiconductor substrate ( 10; 56 ), at least one electrode structure ( 34, 36; 72, 74 ) is provided on a surface of the semiconductor substrate. The electrode structure is constructed as a multi-layered electrode structure including an insulating layer ( 34 A, 36 A; 72 A, 74 A) formed on the surface of the semiconductor substrate and composed of a dielectric material exhibiting a dielectric constant larger than that of silicon dioxide, a lower electrode layer ( 34 B, 36 B; 72 B, 74 B) formed on the insulating layer and composed of polycrystalline silicon, and an upper electrode layer ( 34 C, 36 C; 72 D, 74 D) formed on the lower electrode layer and composed of polycrystalline silicon. The lower electrode layer features an average grain size of polycrystalline silicon which is larger than that of polycrystalline silicon of the upper electrode layer.
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