| 摘要 |
The invention relates to a device (100) for depositing a polycrystalline-silicon-based layer on a moveable, elongate, substantially planar support (4) having two longitudinal surfaces (43, 44) and two longitudinal lateral edges (41, 42), comprising: a crucible (1) containing a silicon-melt bath (2), said support being dipped at least partially into the bath and traversing the equilibrium profile (21) of the bath in a substantially vertical manner in the direction of the length of the elongate support; at least one element for controlling the edges (5, 5'), each edge-control element being maintained in a substantially vertical position close to one of the two longitudinal lateral edges (41, 42) and each edge-control element comprising partition walls (51 - 53') defining a longitudinal opening (54, 54') bordering on the corresponding longitudinal lateral edge and each opening being partially dipped into the bath (2) in order to raise the level of the bath by capillarity. The invention is characterized in that at least one of said partition insertion walls (51 - 52') partially opposite one of the longitudinal surfaces, is substantially planar. |
