发明名称 |
DUAL CAPACITOR STRUCTURE FOR IMAGERS AND METHOD OF FORMATION |
摘要 |
CMOS and CCD imaging devices comprising different in-pixel capacitors and peripheral capacitors and methods of formation are disclosed. The capacitors used in periphery circuits have different requirements from the capacitors used in the pixel itself. Dual stack capacitors comprising two dielectric layers may be provided to achieve low leakage and high capacitance. A single masking step may be provided such that one region has a dual dielectric capacitor and a second region has a single dielectric capacitor. A different dielectric may also be provided in one region compared to another region wherein the inter-electrode insulator comprises a single dielectric in both regions. |
申请公布号 |
WO2005043625(A3) |
申请公布日期 |
2005.09.01 |
申请号 |
WO2004US34370 |
申请日期 |
2004.10.19 |
申请人 |
MICRON TECHNOLOGY, INC.;RHODES, HOWARD, E. |
发明人 |
RHODES, HOWARD, E. |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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