发明名称 SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR STORAGE DEVICE CONTROL METHOD
摘要 <p>A redundancy judgment circuit (3) includes: an in-redundancy judgment circuit address incrementing controller (30); an even-number redundant address judgment unit (31); an odd-number redundant address judgment unit (32); a redundant address ROM (33), a redundant IOROM (34), and a selection unit (35). By building the redundancy judgment circuit (3) for 2-bit pre-fetch operation shown in Fig. 2 into a circuit (memory cell circuit (2), read out circuit (4), address generation circuit (5)) for 2-bit pre-fetch operation shown in Fig. 1, it is possible to give aid to redundancy even in the burst operation by the 2-bit pre-fetch and prevent lowering of the read out operation speed. Moreover, it becomes possible to reduce the wiring length of the decode signal bus in the column direction substantially by half and reduce the decode signal bus region substantially by half. Accordingly, it is possible to prevent danger of increase of wiring density in the wiring region of the decode signal bus and increase the read out speed.</p>
申请公布号 WO2005081257(A1) 申请公布日期 2005.09.01
申请号 WO2004JP02027 申请日期 2004.02.20
申请人 SPANSION LLC;SPANSION JAPAN LIMITED;NAGAO, MITSUHIRO 发明人 NAGAO, MITSUHIRO
分类号 G11C5/02;G11C7/10;G11C29/00;(IPC1-7):G11C11/407 主分类号 G11C5/02
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