METHOD OF PRODUCING AN N-TYPE DIAMOND WITH HIGH ELECTRICAL CONDUCTIVITY

摘要

The production of an n type diamond incorporates an n type doping stage, in which a donor species is made to diffuse under vacuum into a diamond initially doped with an acceptor, in order to form with it donor groups containing the donor species, at a temperature of less than or equal to the dissociation temperature for the complexes formed between the acceptor and the donor species. An Independent claim is also included for n type diamond doped with hydrogen and boron and possessing a conductivity at 300 K greater than or essentially equal to 1 OMEGA-1cm-1.