| 摘要 |
<p>Each of switching circuits included in each of semiconductor memory chips performs switching among interface functions of predetermined second external connecting electrodes by bonding options in accordance with states of potentials applied to first external connecting electrodes. The second external connecting electrodes intended for interchange of the interface functions are electrodes for plural-bit parallel input/output and electrodes for the input of control signals. For example, the switching circuit interchanges interface functions among the predetermined second external connecting electrodes and switches between valid and invalid states of the interface functions of the predetermined second external connecting electrodes. The second external connecting electrodes intended for interchange may preferably have layouts substantially coincident with one another as viewed in obverse and reverse directions in a state in which the pair of semiconductor memory chips is placed such that their back surfaces overlap each other.</p> |
