Method for fabricating a silicide film, multilayered intermediate structure and multilayered structure

摘要

A silicon substrate (11) is prepared, and a titanium intermediate layer (12) is formed on the silicon substrate. Then, a compound element-containing layer (13) containing compound elements to compose an intended silicide film (23) is formed on the titanium intermediate layer (12), to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer. <IMAGE>