发明名称 A method of cutting double-layer plates, containing structures of semiconductor instruments.
摘要 1. Method of cutting double-layer plates with structures of semiconductor instruments, especially pressure sensors, consists in cutting a plate stuck to the stretched foil with a circular saw. It is characterised in that the glass surface of a plate consisting of a layer of silicon deposited on a layer of glass is stuck to foil. Then, it is heated and the side of the silicon layer is incised to the depth of 45 percent-47 percent of the plate thickness in directions x and y. Then, the foil is removed from the glass, stuck to the side of the silicon layer and heated. The silicon side of the plate is incised along the visible incisions and [instrument] structures are separated.
申请公布号 PL189611(B1) 申请公布日期 2005.08.31
申请号 PL19990330892 申请日期 1999.01.18
申请人 INSTYTUT TECHNOLOGII ELEKTRONOWEJ 发明人 LUCZYNSKI JAN
分类号 H01L21/302;H01L21/304 主分类号 H01L21/302
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