发明名称 |
ESD protection device |
摘要 |
A new method to form an integrated circuit device is achieved. The method comprises forming a dielectric layer overlying a semiconductor substrate. An intrinsic semiconductor layer is formed overlying the dielectric layer. The intrinsic semiconductor layer is patterned. A p+ region is formed in the intrinsic semiconductor layer. An n+ region is formed in the intrinsic semiconductor layer. The p+ region and said n+ region are laterally separated by an intrinsic region to thereby form a PIN diode device. A source region and a drain region are formed in the semiconductor substrate to thereby complete a MOSFET device. The PIN diode device is a gate electrode for the MOSFET device.
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申请公布号 |
US6936895(B2) |
申请公布日期 |
2005.08.30 |
申请号 |
US20030682055 |
申请日期 |
2003.10.09 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
MANNA INDRAJIT;LO KENG FOO;TAN PEE YA;FILIPPI RAYMOND |
分类号 |
H01L21/425;H01L21/8234;H01L23/62;H01L27/02;H01L29/49;H01L29/868;H01L31/075;(IPC1-7):H01L23/62;H01L21/823 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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