发明名称 Processes for hermetically packaging wafer level microscopic structures
摘要 A process for hermetically packaging a microscopic structure including a MEMS device is provided. The process for the present invention includes the steps of depositing a capping layer of sacrificial material patterned by lithography over the microscopic structure supported on a substrate, depositing a support layer of a dielectric material patterned by lithography over the capping layer, providing a plurality of vias through the support layer by lithography, removing the capping layer via wet etching to leave the support layer intact in the form of a shell having a cavity occupied by the microscopic structure, depositing a metal layer over the capping layer that is thick enough to provide a barrier against gas permeation, but thin enough to leave the vias open, and selectively applying under high vacuum a laser beam to the metal proximate each via for a sufficient period of time to melt the metal for sealing the via.
申请公布号 US6936494(B2) 申请公布日期 2005.08.30
申请号 US20030691029 申请日期 2003.10.22
申请人 RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY 发明人 CHEUNG KIN P.
分类号 B81B7/00;B81C1/00;H01L21/00;H01L21/8238;(IPC1-7):H01L21/00 主分类号 B81B7/00
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