发明名称 Memory device and method of storing fail addresses of a memory cell
摘要 The embodiments of the present invention are directed to a self-repair schema for memory chips, using a sortable fail-count/fail-address register. The embodiments of the present invention utilize the available redundancy efficiently by scanning the memory array to locate the n elements (WLs or CSLs) with the highest number of defects. A circuit preferably comprises one or more comparators to compare a fail count of an address in an input register with at least one fail count stored in the sortable fail-count/fail-address register. The embodiments of the present invention can be used for an on-chip redundancy calculation and can handle a two dimensional (i.e. row and column) redundancy.
申请公布号 US6937531(B2) 申请公布日期 2005.08.30
申请号 US20030624031 申请日期 2003.07.21
申请人 INFINEON TECHNOLOGIES AG 发明人 FRANKOWSKY GERD
分类号 G11C29/00;G11C29/44;(IPC1-7):G11C29/00 主分类号 G11C29/00
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