发明名称 |
Resist with reduced line edge roughness |
摘要 |
Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.
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申请公布号 |
US6936398(B2) |
申请公布日期 |
2005.08.30 |
申请号 |
US20010851952 |
申请日期 |
2001.05.09 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
FEDYNYSHYN THEODORE H. |
分类号 |
G03F7/004;G03F7/039;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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