发明名称 |
PLASMA PROCESSING SYSTEM AND METHOD AND ELECTRODE PLATE OF PLASMA PROCESSING SYSTEM |
摘要 |
A plasma processing system comprising a processing container (10) which can be set to have a vacuum atmosphere. A first upper electrode (36) is arranged in a ring-shape oppositely to a substrate (W) being processed disposed in the processing container (10). A second upper electrode (38) is arranged on the radially inner side of the first upper electrode (36) while being insulated electrically therefrom. A first power supply section (50) supplies a first high frequency from a first high frequency power supply (52), at a first power level, to the first upper electrode (36). A second power supply section (76) branched from the first power supply section (50) supplies the first high frequency from the first high frequency power supply, at a second power level lower than the first power level, to the second upper electrode (38).
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申请公布号 |
KR20050086830(A) |
申请公布日期 |
2005.08.30 |
申请号 |
KR20057009443 |
申请日期 |
2005.05.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOSHIISHI AKIRA;HIROSE JUN;OGASAWARA MASAHIRO;HIRANO TAICHI;SASAKI HIROMITSU;YOSHIDA TETSUO;SAITO MICHISHIGE;ISHIHARA HIROYUKI;OOYABU JUN;NUMATA KOHJI |
分类号 |
H05H1/46;B01J3/00;B01J19/08;C23F1/00;H01J37/32;H01L21/304;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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