发明名称 MAGNETOELECTRONICS DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A method for fabricating a cladded conductor (42) for use in a magnetoelectronics device is provided. The method includes providing a substrate (10) and forming a conductive barrier layer (12) overlying the substrate (10). A dielectric layer (16) is formed overlying the conductive barrier layer (12) and a conducting line (20) is formed within a portion of the dielectric layer (16). The dielectric layer (16) is removed and a flux concentrator (30) is formed overlying the conducting line (20).
申请公布号 KR20050086791(A) 申请公布日期 2005.08.30
申请号 KR20057009385 申请日期 2005.05.25
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 DURLAM MARK A.;BAKER JEFFREY H.;BUTCHER BRIAN R.;DEHERRERA MARK F.;D'URSO JOHN J.;FUCHS EARL D.;GRYNKEWICH GREGORY W.;KYLER KELLY W.;MOLLA JAYNAL A.;REN J. JACK;RIZZO NICHOLAS D.
分类号 G11C11/15;H01L21/02;H01L27/22;H01L43/12;(IPC1-7):H01L27/115 主分类号 G11C11/15
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