发明名称 Power glitch free internal voltage generation circuit
摘要 A power glitch free internal voltage generation circuit includes: a voltage divider for dividing level of an internal voltage; a reference voltage generator generating a reference voltage having a predetermined voltage level by dividing a level of an external voltage; a comparator connected to the external voltage and the internal voltage and comparing the divided internal voltage with the reference voltage to generate a compared output; and a driver for supplying the external voltage to the internal voltage in response to the output of the comparator. In this manner, a high voltage level from either of the external voltage and the internal voltage is used as a source of the comparator. This, in turn, stably maintains the internal voltage because the driver for transferring the external voltage to the internal voltage is intercepted in the case where a glitch occurs that lowers the external voltage to a level lower than the internal voltage.
申请公布号 US6936998(B2) 申请公布日期 2005.08.30
申请号 US20030620547 申请日期 2003.07.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO SUNG-HEE
分类号 G05F1/56;G05F3/24;(IPC1-7):G05F1/40;G05F1/10 主分类号 G05F1/56
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