| 摘要 |
An electrode film and a protective electrode film are formed on an insulating film and a first magnetic film in turn. Then, a first photoresist layer, an intermediate layer and a second photoresist layer are formed on the protective electrode film in turn. The intermediate layer is formed by a sputtering method so that the surface temperature of the intermediate layer is set to 140° C. or below. Then, the first photoresist layer is exposed and developed, to fabricate a photoresist pattern. Then, the intermediate layer is partially etched and removed via the photoresist pattern as a mask by a reactive ion etching method using a chlorine-based gas.
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