| 摘要 |
The semiconductor device according to the present invention having an LSI circuit and an inductor element formed on the same substrate has an interlayer insulating film formed on the substrate, a first laminated wiring layer formed on the interlayer insulating film and serves as an internal wiring of the LSI circuit, and a second laminated wiring layer formed on the interlayer insulating film and constitutes the inductor element, wherein the first and second laminated wiring layers are mutually different, and no Ti layer which makes contact with an Al alloy layer exists on the second laminated wiring layer. |
