| 摘要 |
In a pretreatment process, a silicon oxide film ( 13 ) with nitrogen content is formed on a semiconductor substrate ( 10 ). In a segregation process executing heat treatment in an in-oxidiz-able gas atmosphere, a silicon nitride layer ( 14 ) segregates out at the interface of the silicon substrate ( 10 ) and the silicon oxide film ( 13 ). After this, the unnecessary silicon oxide film ( 13 ) on the silicon nitride layer ( 14 ) is removed, and a silicon oxide layer ( 15 ) is formed beneath the exposed silicon nitride layer ( 14 ) with oxygen passing through the exposed silicon nitride layer ( 14 ). Whereby, a gate electrode ( 16 ) is formed on the gate insulating film consisting of the silicon nitride layer ( 14 ) and the silicon oxide layer ( 15 ).
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