发明名称 Polishing slurries for copper and associated materials
摘要 A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
申请公布号 US6936542(B2) 申请公布日期 2005.08.30
申请号 US20010022317 申请日期 2001.12.18
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 WOJTCZAK WILLIAM A.;BAUM THOMAS H.;NGUYEN LONG;REGULSKI CARY
分类号 C09C1/68;C09G1/02;H01L21/321;(IPC1-7):H01L21/302 主分类号 C09C1/68
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