摘要 |
A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes ( 1, 2 ) with at least one isolator section ( 3 ) and a coupler ( 4 ), which couples the different emission wavelengths lambda<SUB>1</SUB>, lambda<SUB>2 </SUB>into one output port ( 5 ). The isolator section can be either a light absorptive type or wavelength selective type, including a Bragg grating type isolator or a photonic bandgap crystal type isolator. The coupler is preferably a Y-junction coupler, but can also be a multi-branch waveguide coupler or a waveguide directional coupler.
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