发明名称 |
Intermediate structure having a silicon barrier layer encapsulating a semiconductor substrate |
摘要 |
A method of forming an isolation structure comprising forming n-type areas and/or p-type areas implanted respectively therein on a first surface of a substrate. A pad oxide film is grown on the first surface of the substrate covering the p-wells and/or n-wells. A diffusion barrier(s) is deposited on the first surface of the substrate and a second surface of the substrate to form an encapsulated structure. The encapsulated structure is annealed to activate the n-type and/or p-type areas. A mask material is applied over the diffusion barrier on the first surface of the substrate to define active device areas and a dry etch process is used to etch away the unmasked potions of the diffusion barrier. The mask material is stripped and a field oxide is grown on the first surface of the substrate. A portion of the field oxide and all of the diffusion barrier is removed, resulting in active areas surrounded by a field isolation structure.
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申请公布号 |
US6936897(B2) |
申请公布日期 |
2005.08.30 |
申请号 |
US19990259145 |
申请日期 |
1999.02.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PAN PAI-HUNG;JENG NANSENG |
分类号 |
H01L21/761;H01L21/762;H01L21/8238;(IPC1-7):H01L29/772 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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