发明名称 |
Photoelectric conversion device and solid-state image sensing device using the same |
摘要 |
Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered structure: a carrier generation/multiplication layer composed of amorphous silicon to have both the function of absorbing light and generating carriers through optical excitation and the function of multiplying the generated carriers; an electron injection inhibiting layer composed of an amorphous silicon carbide of the p-type conductivity to inhibit injection of electrons into the carrier generation/multiplication layer; and a hole injection inhibiting layer composed of an amorphous silicon nitride of the n-type conductivity to inhibit injection of holes into the carrier generation/multiplication layer. The said carrier generation/multiplication layer is provided between said electron injection inhibiting layer and said hole injection inhibiting layer.
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申请公布号 |
US6936806(B1) |
申请公布日期 |
2005.08.30 |
申请号 |
US20000704539 |
申请日期 |
2000.11.03 |
申请人 |
MINOLTA CO., LTD. |
发明人 |
KITAMURA KEN;HATANAKA YOSHINORI |
分类号 |
H01L31/107;H01L27/00;H01L27/146;H01L27/148;H01L31/105;(IPC1-7):H01L27/00 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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