发明名称 |
Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode |
摘要 |
A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer provided on the light-emitting layer and formed of a p-type boron phosphide-based semiconductor are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate and which device includes a p-type Ohmic electrode provided so as to achieve contact with the p-type upper cladding layer, characterized in that a amorphous layer formed of boron phosphide-based semiconductor is disposed between the p-type upper cladding layer and the n-type light-emitting layer. This boron phosphide-based semiconductor light-emitting device exhibits a low forward voltage or threshold value and has excellent reverse breakdown voltage characteristics.
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申请公布号 |
US6936863(B2) |
申请公布日期 |
2005.08.30 |
申请号 |
US20030714612 |
申请日期 |
2003.11.18 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
UDAGAWA TAKASHI;KASAHARA AKIRA |
分类号 |
C23C16/30;H01L33/02;H01L33/16;H01L33/30;H01L33/32;(IPC1-7):H01L33/00;H01L29/20 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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