发明名称 |
VERTICAL INSULATED GATE TRANSISTOR AND MANUFACTURING METHOD |
摘要 |
A vertical insulated gate transistor is manufactured by providing a trench (26) extending through a source layer (8) and a channel layer (6) towards a drain layer (2). A spacer etch is used to form gate portions (20) along the trench side walls, a dielectric material (30) is filled into the trench between the sidewalls gate portions (20), and a gate electrical connection layer (30) is formed at the top of the trench electrically connecting the gate portions (20) across the trench.
|
申请公布号 |
KR20050085608(A) |
申请公布日期 |
2005.08.29 |
申请号 |
KR20057010759 |
申请日期 |
2005.06.13 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
SCHMITZ JURRIAAN;HUETING RAYMOND J. E.;HIJZEN ERWIN A.;MONTREE ANDREAS H.;IN-»T ZANDT MICHAEL A. A.;KOOPS GERRIT E. J. |
分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|