发明名称 GATE DRIVER, MOTOR DRIVING DEVICE INCLUDING THE GATE DRIVER, AND APPARATUS EQUIPPED WITH THE MOTOR DRIVING DEVICE
摘要 Gate driver (3) for forcing power transistor (2) including a gate electrode insulated with oxide film into conduction or shut-off, gate driver (3) includes first current source (31) for outputting a first current-value to raise an electric potential of the gate electrode for changing the shut-off state of power transistor (2) to the conductive state; and second current source (32) for outputting a second current-value to lower the electric potential of the gate electrode for changing the conductive state of power transistor (2) to the shut-off state. The first current-value and the second current-value are assigned based on at least one kind of current-source control information. This structure allows preparing an appropriate speed of forcing power transistor (2) into conduction or shut-off with a small number of elements, and gate driver (3) can be used with ease for driving power transistors (2) having different output sizes.
申请公布号 KR20050085635(A) 申请公布日期 2005.08.29
申请号 KR20057010830 申请日期 2005.06.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YASOHARA MASAHIRO;KAMEDA KOJI;SAKURAMA KAZUAKI
分类号 H03K17/0412;H03K17/16;(IPC1-7):H02M1/08;H02P7/06 主分类号 H03K17/0412
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