发明名称 METHOD OF FORMING METAL OXIDE FILM AND MICROWAVE POWER SOURCE UNIT FOR USE IN THE METHOD
摘要 A method of forming a metal oxide film in accordance with plasma CVD process, comprising performing glow discharge in a low output region so as to carry out reaction wherein the main reactant is an organometal, and thereafter performing glow discharge in a high output region so as to carry out reaction between the organometal and an oxidative gas, thereby obtaining a plastic substrate and, sequentially superimposed on the surface thereof, an organic layer and a metal oxide film. This method enables forming a thin film of excellent adherence, softness and flexibility on the surface of a substrate such as a plastic in accordance with plasma CVD process.
申请公布号 KR20050084844(A) 申请公布日期 2005.08.29
申请号 KR20057006169 申请日期 2005.04.08
申请人 TOYO SEIKAN KAISHA, LTD. 发明人 NAMIKI TSUNEHISA;IEKI TOSHIHIDE;KURASHIMA HIDEO;INAGAKI HAJIME;KOBAYASHI AKIRA;YAMADA KOJI
分类号 C23C16/02;C23C16/04;C23C16/40;C23C16/511;C23C16/515;H01J37/32;(IPC1-7):C23C16/40;B32B9/00;H05H1/46;C08J7/06 主分类号 C23C16/02
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